PART |
Description |
Maker |
IC61S25636T-133TQI IC61S25636T-200TQ IC61S25636T-2 |
8Mb SyncBurst Pipelined SRAM
|
Integrated Circuit Solu...
|
MT58L512L18F MT58L256L32F MT58L256V32F MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology
|
MT58L512L18F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology, Inc.
|
MT58L512L18D MT58L256L32D MT58L1MV18D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
MICRON[Micron Technology]
|
GS881Z18AT-133 GS881Z18AT-133I GS881Z18AT-150 GS88 |
133MHz 8.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 150MHz 7.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 166MHz 7ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 225MHz 6ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM 250MHz 5.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM
|
GSI Technology
|
MT58L32L32D MT58L32L36D MT58L64L18D |
32K x 36,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 64K x 18, 3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 32K x 32,3.3V I/O, Pipelined, DCD SyncBurst SRAM(1Mb,3.3V输入/输出,流水线式,双循环取消选择,同步脉冲静态存储器) 32KX82,3.3 O的流水线,双氰胺SyncBurst的SRAM兆,3.3V的输输出,流水线式,双循环取消选择,同步脉冲静态存储器
|
Micron Technology, Inc. Micrel Semiconductor, Inc.
|
MT58V1MV18D MT58L512Y36D MT58V512V32D MT58V512V36D |
16Mb SYNCBURST SRAM
|
Micron Technology
|
GS880F18AT-6I GS880F32AT-6I |
6ns 512K x 18 8Mb sync burst SRAM 6ns 256K x 32 8Mb sync burst SRAM
|
GSI Technology
|
GS78108B-10 |
10ns 1M x 8 8Mb asynchronous SRAM
|
GSI Technology
|
DS3065WP-100IND |
3.3V, 8Mb, Nonvolatile SRAM with Clock
|
MAXIM - Dallas Semiconductor
|
GS78116AGB-8I GS78116AB-10 GS78116AB-10I GS78116AB |
512K X 16 STANDARD SRAM, 10 ns, PBGA119 512K x 16 8Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
MT55L512L18F |
8Mb: 512K x 18,Flow-Through ZBT SRAM(8Mb流通式同步静态存储器)
|
Micron Technology, Inc.
|